Nvis 6512A Techbook for Understanding Characteristics of MOSFET, FET and UJT

Nvis6512A

NVIS TECHNOLOGIES

New

- Generalized design
- Standalone operation
- Inbuilt fixed and variable power supply
- Toggle switch for selection of variable power supply
- Inbuilt Ammeter and Voltmeter
- Breadboard
- Resistance bank
- 10 turn potentiometer
- Online product tutorial

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Nvis 6512A Techbook for Understanding Characteristics of MOSFET, FET and UJT  is a compact, ready to use experiment board. This is useful for students to plot different characteristics of n-channel MOSFET, n-channel FET and UJT and to understand operation of these power electronics devices in various regions. Using this product student can also evaluate FET parameters (Drain resistance, Transconductance, and Amplification factor) & UJT parameters (Inter base resistance and intrinsic standoff ratio). In-built DC power supply, voltmeter and ammeter with DPM features make this product easy to operate and can be used as standalone system. Breadboard allows student to construct circuits using external components along with on-board resources

Nvis 6512A Techbook for Understanding Characteristics of MOSFET, FET and UJT  is an ideal platform to enhance education, training, skills & development amongs our young minds.

- MainsSupply: 90-230 V, 50 Hz
           -- DC Fixed Power Supply: -5 V,+15 V,+35 V
           -- DC Variable Power Supply: 1.5 V to 14 V
                                                      1.5 V to 34 V

- Voltmeter: 0-200 V

- Ammeter: 0-200 mA

- BreadBoard:
           -- Dimension (mm): 175 x 61 x 10
           -- Distribution strips: 2
           -- Distribution holes: 200
           -- Terminal Strips: 1
           -- Terminal holes: 640

- Resistor Bank: M.F.R. 100E 1W (3 Nos.)
                           M.F.R. 470E 1W (3 Nos.)
                           M.F.R. 1K 1W (3 Nos.)

- Variable Resistances: 5 KΩ Ten turn Potentiometer (1 No.)
                                     10KΩ Ten turn Potentiometer (1No.)
                                     5KΩ Single turn Potentiometer (1No.)

- Fuse: 500 mA, slow blow

- Dimensions (mm): 350 x D 280 x H 55

- To study and plot the Drain Characteristics of n channel MOSFET
- To study and plot the Transfer Characteristics of n channel MOSFET
- To study and plot the V-I characteristics of JFET Evaluation of following parameters of JFET: DC Drain resistance, Transconductance, Amplification factor
- To plot the VI characteristics of UJT Evaluation of following parameters of UJT: Intrinsic Stand-off Ratio, Inter base resistance

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